INVESTIGATION OF LOW-TEMPERATURE EPITAXIAL REGROWTH OF ION-IMPLANTED AMORPHOUS GAAS

被引：2

作者：

HEROLD, J ^{[1
]}

BARTSCH, H ^{[1
]}

WESCH, W ^{[1
]}

GOTZ, G ^{[1
]}

机构：

[1] AKAD WISSENSCH DDR,INST FESTKORPERPHYS & ELEKTRONENMIKROSKOPIE,DDR-4050 HALLE,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 111卷 / 01期

关键词：

D O I：

10.1002/pssa.2211110106

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：59 / 70

页数：12

共 16 条

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