INTERFACE STRUCTURE EVOLUTION AND IMPURITY EFFECTS DURING SOLID-PHASE-EPITAXIAL GROWTH IN GAAS

被引：19

作者：

LICOPPE, C

NISSIM, YI

MERIADEC, C

KRAUZ, P

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 04期

关键词：

D O I：

10.1063/1.337309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1352 / 1358

页数：7

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