RESPONSE OF SMALL PHOTOVOLTAIC DETECTORS TO UNIFORM RADIATION

被引:27
作者
SHAPPIR, J [1 ]
KOLODNY, A [1 ]
机构
[1] TECHNION ISRAEL INST TECHNOL, FAC ELECT ENGN, HAIFA, ISRAEL
关键词
D O I
10.1109/T-ED.1977.18882
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1093 / 1098
页数:6
相关论文
共 16 条
[1]  
AMES WF, 1969, NUMERICAL METHODS PA
[2]   INFLUENCE OF BULK AND SURFACE PROPERTIES ON IMAGE SENSING SILICON DIODE ARRAYS [J].
BUCK, TM ;
CASEY, HC ;
DALTON, JV ;
YAMIN, M .
BELL SYSTEM TECHNICAL JOURNAL, 1968, 47 (09) :1827-+
[3]   INVESTIGATION OF LATERAL TRANSISTORS - DC CHARACTERISTICS [J].
CHOU, S .
SOLID-STATE ELECTRONICS, 1971, 14 (09) :811-&
[4]   SILICON DIODE ARRAY CAMERA TUBE [J].
CROWELL, MH ;
LABUDA, EF .
BELL SYSTEM TECHNICAL JOURNAL, 1969, 48 (05) :1481-+
[5]   RESPONSE OF A PARTIALLY ILLUMINATED PHOTOVOLTAIC P-N JUNCTION CELL [J].
DEB, S ;
MUKHERJE.MK .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1966, 21 (01) :89-&
[8]   CARRIER LIFETIME IN INDIUM ANTIMONIDE [J].
LAFF, RA ;
FAN, HY .
PHYSICAL REVIEW, 1961, 121 (01) :53-&
[9]   PHOTOEFFECTS IN NONUNIFORMLY IRRADIATED P-N JUNCTIONS [J].
LUCOVSKY, G .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) :1088-1095
[10]   LATERAL EFFECTS IN HIGH-SPEED PHOTODIODES [J].
LUCOVSKY, G ;
EMMONS, RB .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (01) :5-+