CREATION OF DEEP LEVELS IN HORIZONTAL BRIDGMAN-GROWN GAAS BY HYDROGENATION

被引：42

作者：

CHO, HY ^{[1
]}

KIM, EK ^{[1
]}

MIN, SK ^{[1
]}

KIM, JB ^{[1
]}

JANG, J ^{[1
]}

机构：

[1] KYUNG HEE UNIV, DEPT PHYS, SEOUL 131701, SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 10期

关键词：

D O I：

10.1063/1.100094

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：856 / 858

页数：3

共 13 条

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[2]

CHO HY, 1987, J KOREAN PHYS SOC, V20, P379

[3]

CHO HY, 1987, NEW PHYS KOREAN PHYS, V47, P680

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[5] PASSIVATION OF DEEP LEVEL DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS BY HYDROGEN PLASMA EXPOSURE [J].

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[6] DEUTERIUM PASSIVATION OF GRAIN-BOUNDARY DANGLING BONDS IN SILICON THIN-FILMS [J].

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[7] PASSIVATION OF THE DOMINANT DEEP LEVEL (EL2) IN GAAS BY HYDROGEN [J].

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KAMINSKA, M ;

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[8] ABNORMAL-BEHAVIOR OF MIDGAP ELECTRON TRAP IN HB-GAAS DURING THERMAL ANNEALING [J].

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JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4422-4425

[9] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS [J].

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[10] HYDROGENATION OF GAAS ON SI - EFFECTS ON DIODE REVERSE LEAKAGE CURRENT [J].

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WU, CS ;

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APPLIED PHYSICS LETTERS, 1987, 51 (07) :496-498

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