ABNORMAL-BEHAVIOR OF MIDGAP ELECTRON TRAP IN HB-GAAS DURING THERMAL ANNEALING

被引：45

作者：

MIN, SK

KIM, EK

CHO, HY

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 09期

关键词：

D O I：

10.1063/1.340187

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4422 / 4425

页数：4

共 17 条

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