HYDROGENATION OF GAAS ON SI - EFFECTS ON DIODE REVERSE LEAKAGE CURRENT

被引：45

作者：

PEARTON, SJ ^{[1
]}

WU, CS ^{[1
]}

STAVOLA, M ^{[1
]}

REN, F ^{[1
]}

LOPATA, J ^{[1
]}

DAUTREMONTSMITH, WC ^{[1
]}

VERNON, SM ^{[1
]}

HAVEN, VE ^{[1
]}

机构：

[1] SPIRE CORP, BEDFORD, MA 01730 USA

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 07期

关键词：

D O I：

10.1063/1.98378

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：496 / 498

页数：3

共 18 条

[1] A PROPOSED HYDROGENATION NITRIDIZATION PASSIVATION MECHANISM FOR GAAS AND OTHER III-V SEMICONDUCTOR-DEVICES, INCLUDING INGAAS LONG WAVELENGTH PHOTODETECTORS
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[2] HYDROGEN PLASMA-ETCHING OF GAAS OXIDE
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[3] DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN
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TU, CW
PEARTON, SJ
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 108 - 110
[4] PASSIVATION OF DEEP LEVEL DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS BY HYDROGEN PLASMA EXPOSURE
DAUTREMONTSMITH, WC
NABITY, JC
SWAMINATHAN, V
STAVOLA, M
CHEVALLIER, J
TU, CW
PEARTON, SJ
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1098 - 1100
[5] PROPERTIES OF MODFETS GROWN ON SI SUBSTRATES AT DC AND MICROWAVE-FREQUENCIES
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) : 1407 - 1412
[6] GAAS LIGHT-EMITTING-DIODES FABRICATED ON GE-COATED SI SUBSTRATES
FLETCHER, RM
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BALLANTYNE, JM
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (10) : 967 - 969
[7] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES
GALE, RP
FAN, JCC
TSAUR, BY
TURNER, GW
DAVIS, FM
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (07): : 169 - 171
[8] GAAS-MESFET RING OSCILLATOR ON SI SUBSTRATE
ISHIDA, T
NONAKA, T
YAMAGISHI, C
KAWARADA, Y
SANO, Y
AKIYAMA, M
KAMINISHI, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) : 1037 - 1041
[9] Lindhard J., 1963, MAT FYS MEDD DAN VID, V33, P1, DOI DOI 10.1002/ADMA.200904153
[10] HYDROGENATION OF SHALLOW-DONOR LEVELS IN GAAS
PEARTON, SJ
DAUTREMONTSMITH, WC
CHEVALLIER, J
TU, CW
CUMMINGS, KD
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) : 2821 - 2827

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