GAAS-MESFET RING OSCILLATOR ON SI SUBSTRATE

被引：11

作者：

ISHIDA, T

NONAKA, T

YAMAGISHI, C

KAWARADA, Y

SANO, Y

AKIYAMA, M

KAMINISHI, K

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1109/T-ED.1985.22070

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1037 / 1041

页数：5

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