CHARGE TRANSPORT AND TRAPPING CHARACTERISTICS IN THIN NITRIDE OXIDE STACKED FILMS

被引：18

作者：

YOUNG, KK

HU, CM

OLDHAM, WG

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 11期

关键词：

D O I：

10.1109/55.9294

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：616 / 618

页数：3

共 10 条

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FROHMANB.D ;

LENZLINGER, M .

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[2]

LEE SK, 1987, MAY P TAIW INT S VLS, P93

[3]

Nagatomo M., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P144

[4]

SUN JYC, 1987, P TAIWAN INT S VLSI, P106

[5] MOS AND BIPOLAR VLSI TECHNOLOGIES USING ELECTRON-BEAM LITHOGRAPHY [J].

VARNELL, GL ;

SHAH, PL ;

HAVEMANN, RH .

PROCEEDINGS OF THE IEEE, 1983, 71 (05) :612-639

[6]

Watanabe T., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P173

[7] DETERMINATION OF THE FOWLER-NORDHEIM TUNNELING BARRIER FROM NITRIDE TO OXIDE IN OXIDE - NITRIDE DUAL DIELECTRIC [J].

YAU, LD .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (06) :365-367

[8]

YAU LD, 1985, MAY P TAIW INT S VLS, P295

[9] CHARGE TRANSPORT AND TRAPPING MODEL FOR SCALED NITRIDE OXIDE STACKED FILMS [J].

YOUNG, KK ;

HU, C ;

OLDHAM, WG .

APPLIED SURFACE SCIENCE, 1987, 30 (1-4) :171-179

[10]

YOUNG KK, 1986, OCT P SIL NITR SIL D, P474

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