SINGLE-SITE THEORY OF WANNIER EXCITONS IN DISORDERED SEMICONDUCTORS .2. NUMERICAL RESULTS

被引：2

作者：

FISCHBECK, HJ

STREHLOW, R

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1980年 / 101卷 / 02期

关键词：

D O I：

10.1002/pssb.2221010203

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：461 / 472

页数：12

共 8 条

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