PRESSURE-DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHTS IN AL/ALGAAS JUNCTIONS

被引:7
作者
DOBACZEWSKI, L [1 ]
LANGER, JM [1 ]
MISSOUS, M [1 ]
机构
[1] UNIV MANCHESTER,INST SCI & TECHNOL,MANCHESTER M60 1QD,LANCS,ENGLAND
关键词
D O I
10.12693/APhysPolA.84.741
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The influence of hydrostatic pressure up to 8 kbar on the barrier height of epitaxially MBE-grown Al on AlGaAs metal-semiconductor junctions is reported. The pressure change of the Schottky barrier on n-type AlGaAs is the same as that of the energy gap (for both direct and indirect-gap AlGaAs compositions), while for p-type AlGaAs it is negligible. This result is in direct conflict with a class of models of the Schottky barrier formation based on a concept of a semiconductor neutrality level alignment with the metal Fermi level.
引用
收藏
页码:741 / 744
页数:4
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