STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF CRYSTALLOGRAPHIC DEFECTS IN SILICON RIBBONS

被引：65

作者：

YANG, K

SCHWUTTKE, GH

CISZEK, TF

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1980年 / 50卷 / 01期

关键词：

D O I：

10.1016/0022-0248(80)90252-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：301 / 310

页数：10

共 24 条

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[6] GROWTH AND CHARACTERIZATION OF SILICON RIBBONS PRODUCED BY A CAPILLARY ACTION SHAPING TECHNIQUE [J].

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SCHWUTTKE, GH .

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[7]

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[10] ORIENTATION DEPENDENCE OF DEFECT STRUCTURE IN EFG SILICON RIBBONS [J].

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