ETCHING STUDIES OF DIFFUSION SOURCE BORON GLASS

被引:4
作者
PLAUGER, LR [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1149/1.2403275
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
For selective boron doping of silicon, a SiO//2 diffusion mask is used. In many cases, it is advantageous to retain the same SiO//2 mask on the silicon slice after diffusion and remove the boron diffusion source glass. To accomplish retention of the SiO//2 mask while dissolving boron diffusion source glass, a selective etch is required that favors dissolution of boron-doped glass. Etching solutions that fulfill this need have been found.
引用
收藏
页码:1428 / 1430
页数:3
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