ETCH RATE CHARACTERIZATION OF BOROSILICATE GLASSES AS DIFFUSION SOURCES

[1] BARRY ML, 1968, SOLID STATE TECHNOL, V11, P39

[2] DOPED OXIDES AS DIFFUSION SOURCES .I. BORON INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 854 - &

[3] CRANK J, 1956, MATHEMATICS DIFFUSIO, P37

[4] Cuccia A., 1969, Semiconductor silicon, P506

[5] DIRECT NITRIDATION OF SILICON SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (10) : 1092 - &

[6] HU SM, TO BE PUBLISHED

[7] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[8] DIFFUSION INTO SILICON FROM AN ARSENIC-DOPED OXIDE [J]. SOLID-STATE ELECTRONICS, 1967, 10 (06) : 623 - &

[9] DIFFUSION FROM A PLANE FINITE SOURCE INTO A SECOND PHASE WITH SPECIAL REFERENCE TO OXIDE-FILM DIFFUSION SOURCES ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (05) : 548 - +

[10] PLISKIN W, PRIVATE COMMUNICATIO

[1] BARRY ML, 1968, SOLID STATE TECHNOL, V11, P39

[2] DOPED OXIDES AS DIFFUSION SOURCES .I. BORON INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 854 - &

[3] CRANK J, 1956, MATHEMATICS DIFFUSIO, P37

[4] Cuccia A., 1969, Semiconductor silicon, P506

[5] DIRECT NITRIDATION OF SILICON SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (10) : 1092 - &

[6] HU SM, TO BE PUBLISHED

[7] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[8] DIFFUSION INTO SILICON FROM AN ARSENIC-DOPED OXIDE [J]. SOLID-STATE ELECTRONICS, 1967, 10 (06) : 623 - &

[9] DIFFUSION FROM A PLANE FINITE SOURCE INTO A SECOND PHASE WITH SPECIAL REFERENCE TO OXIDE-FILM DIFFUSION SOURCES ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (05) : 548 - +

[10] PLISKIN W, PRIVATE COMMUNICATIO