DIFFUSION FROM A PLANE FINITE SOURCE INTO A SECOND PHASE WITH SPECIAL REFERENCE TO OXIDE-FILM DIFFUSION SOURCES ON SILICON

被引：16

作者：

OWEN, AE

SCHMIDT, PF

机构：

来源：

关键词：

D O I：

10.1149/1.2411325

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：548 / +

页数：1

共 23 条

[1] BECKE H, 1964, T METALL SOC AIME, V230, P307
[2] CARSLAW HC, CONDUCTION HEAT SOLI, P236
[3] Chang J. J., 1963, IEEE T ELECTRON DEV, V10, P357
[4] FRANZ I, 1964, TELEFUNKENZEITUNG, V37, P194
[5] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON
FULLER, CS
DITZENBERGER, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553
[6] ZUM MECHANISMUS DER DOTIERUNG VON SILICIUM MIT PHOSPHOR BEI ANWESENHEIT EINER OBERFLACHENSCHICHT AUS (SIO2)N.P2O5
GARSKI, H
[J]. ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1967, A 22 (01): : 66 - &
[7] HANDELMAN ET, 1961, SOLID STATE ELECTRON, V2, P123
[8] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON
IRVIN, JC
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +
[9] FORMATION AND COMPOSITION OF SURFACE LAYERS AND SOLUBILITY LIMITS OF PHOSPHORUS DURING DIFFUSION IN SILICON
KOOI, E
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) : 1383 - 1381
[10] KUNZ H, 1966, BROWN BOVERY REV, V53, P34