ZUM MECHANISMUS DER DOTIERUNG VON SILICIUM MIT PHOSPHOR BEI ANWESENHEIT EINER OBERFLACHENSCHICHT AUS (SIO2)N.P2O5

被引：4

作者：

GARSKI, H

机构：

来源：

ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE | 1967年 / A 22卷 / 01期

关键词：

D O I：

10.1515/zna-1967-0112

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

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页码：66 / &

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共 20 条

[1] EFFECT OF OXIDE LAYERS ON THE DIFFUSION OF PHOSPHORUS INTO SILICON
ALLEN, RB
BERNSTEIN, H
KURTZ, AD
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 334 - 337
[2] DIFFUSION ACROSS A SEMICONDUCTOR-VAPOUR INTERFACE
BULLOUGH, R
NEWMAN, RC
WAKEFIELD, J
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (465): : 369 - 379
[3] DIFFUSION OF PHOSPHORUS INTO SILICON UNDER CONDITIONS OF CONTROLLED VAPOUR PRESSURE
COUPLAND, MJ
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (472): : 577 - 584
[4] DONOVAN RP, 1963, SPR M EL SOC, V13, P108
[5] FRANZ I, 1964, TELEFUNKENZEITUNG, V37, P194
[6] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON
IRVIN, JC
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +
[7] FORMATION AND COMPOSITION OF SURFACE LAYERS AND SOLUBILITY LIMITS OF PHOSPHORUS DURING DIFFUSION IN SILICON
KOOI, E
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) : 1383 - 1381
[8] KUPER AB, 1964, SPR M EL SOC, V13, P108
[9] CRYSTALLOGRAPHIC DEPENDENCE OF SIP PRECIPITATES IN DIFFUSED SILICON
OKEEFFE, TW
SCHMIDT, PF
STICKLER, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (08) : 878 - &
[10] DIFFUSION OF PHOSPHORUS IN SILICON OXIDE FILM
SAH, CT
SELLO, H
TREMERE, DA
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (3-4) : 288 - 298