A STUDY OF THE DEPOSITION OF POLYMERIC MATERIAL ONTO SURFACES FROM FLUOROCARBON RF PLASMAS

[1] Bellamy L., 1957, INFRARED SPECTRA COM

[2] Chu W. K., 1978, BACKSCATTERING SPECT

[3] PLASMA-ASSISTED ETCHING IN MICROFABRICATION [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1983, 13 : 91 - 116

[4] MECHANISMS OF ETCHING AND POLYMERIZATION IN RADIOFREQUENCY DISCHARGES OF CF4-H2,CF4-C2F4,C2F6-H2,C3F8-H2 [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1284 - 1288

[5] MECHANISM OF ETCHING, POLYMERIZATION AND DEPOSITION IN RF (RADIO-FREQUENCY) DISCHARGES [J]. PURE AND APPLIED CHEMISTRY, 1985, 57 (09) : 1287 - 1298

[6] DILKS A, 1981, MACROMOLECULES, V14, P1855

[7] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]

[8] Haslam J., 1972, IDENTIFICATION ANAL, V2nd

[9] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[10] PLASMA REACTOR DESIGN FOR SELECTIVE ETCHING OF SIO2 ON SI [J]. SOLID-STATE ELECTRONICS, 1976, 19 (12) : 1039 - 1040

[1] Bellamy L., 1957, INFRARED SPECTRA COM

[2] Chu W. K., 1978, BACKSCATTERING SPECT

[3] PLASMA-ASSISTED ETCHING IN MICROFABRICATION [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1983, 13 : 91 - 116

[4] MECHANISMS OF ETCHING AND POLYMERIZATION IN RADIOFREQUENCY DISCHARGES OF CF4-H2,CF4-C2F4,C2F6-H2,C3F8-H2 [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1284 - 1288

[5] MECHANISM OF ETCHING, POLYMERIZATION AND DEPOSITION IN RF (RADIO-FREQUENCY) DISCHARGES [J]. PURE AND APPLIED CHEMISTRY, 1985, 57 (09) : 1287 - 1298

[6] DILKS A, 1981, MACROMOLECULES, V14, P1855

[7] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]

[8] Haslam J., 1972, IDENTIFICATION ANAL, V2nd

[9] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[10] PLASMA REACTOR DESIGN FOR SELECTIVE ETCHING OF SIO2 ON SI [J]. SOLID-STATE ELECTRONICS, 1976, 19 (12) : 1039 - 1040