BONDING AT THE CAF2 SI(111) INTERFACE FROM TIGHT-BINDING CLUSTER AND BAND THEORY

[1] DERIVATION OF EXTENDED HUCKEL METHOD WITH CORRECTIONS - ONE ELECTRON MOLECULAR-ORBITAL THEORY FOR ENERGY-LEVEL AND STRUCTURE DETERMINATIONS [J]. JOURNAL OF CHEMICAL PHYSICS, 1975, 62 (03) : 1187 - 1188

[2] DOPANT EFFECT OF YTTRIUM AND THE GROWTH AND ADHERENCE OF ALUMINA ON NICKEL-ALUMINUM ALLOYS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (07) : 1695 - 1701

[3] TOWARD A BETTER UNDERSTANDING OF THE ATOM SUPERPOSITION AND ELECTRON DELOCALIZATION MOLECULAR-ORBITAL THEORY AND A SYSTEMATIC TEST - DIATOMIC OXIDES OF THE 1ST TRANSITION-METAL SERIES, BONDING AND TRENDS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1987, 91 (16) : 4245 - 4250

[4] ANDERSON AB, 1987, SURF SCI, V183, P438, DOI 10.1016/S0039-6028(87)80220-0

[5] EPITAXIAL RELATIONS IN GROUP-IIA FLUORIDE SI(111) HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (06) : 517 - 519

[6] FORMATION OF GAAS-ON-INSULATOR STRUCTURES ON SI SUBSTRATES BY HETEROEPITAXIAL GROWTH OF CAF2 AND GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02): : L139 - L141

[7] EPITAXIAL-GROWTH OF SI FILMS ON CAF2/SI STRUCTURES WITH THIN SI LAYERS PREDEPOSITED AT ROOM-TEMPERATURE [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3566 - 3570

[8] EPITAXIAL-GROWTH OF SILICON AND GERMANIUM FILMS ON CAF2/SI [J]. THIN SOLID FILMS, 1986, 139 (03) : 287 - 297

[9] SPECIAL POINTS IN BRILLOUIN ZONE [J]. PHYSICAL REVIEW B, 1973, 8 (12): : 5747 - 5753

[10] ATOMIC SCREENING CONSTANTS FROM SCF FUNCTIONS [J]. JOURNAL OF CHEMICAL PHYSICS, 1963, 38 (11) : 2686 - &

[1] DERIVATION OF EXTENDED HUCKEL METHOD WITH CORRECTIONS - ONE ELECTRON MOLECULAR-ORBITAL THEORY FOR ENERGY-LEVEL AND STRUCTURE DETERMINATIONS [J]. JOURNAL OF CHEMICAL PHYSICS, 1975, 62 (03) : 1187 - 1188

[2] DOPANT EFFECT OF YTTRIUM AND THE GROWTH AND ADHERENCE OF ALUMINA ON NICKEL-ALUMINUM ALLOYS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (07) : 1695 - 1701

[3] TOWARD A BETTER UNDERSTANDING OF THE ATOM SUPERPOSITION AND ELECTRON DELOCALIZATION MOLECULAR-ORBITAL THEORY AND A SYSTEMATIC TEST - DIATOMIC OXIDES OF THE 1ST TRANSITION-METAL SERIES, BONDING AND TRENDS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1987, 91 (16) : 4245 - 4250

[4] ANDERSON AB, 1987, SURF SCI, V183, P438, DOI 10.1016/S0039-6028(87)80220-0

[5] EPITAXIAL RELATIONS IN GROUP-IIA FLUORIDE SI(111) HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (06) : 517 - 519

[6] FORMATION OF GAAS-ON-INSULATOR STRUCTURES ON SI SUBSTRATES BY HETEROEPITAXIAL GROWTH OF CAF2 AND GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02): : L139 - L141

[7] EPITAXIAL-GROWTH OF SI FILMS ON CAF2/SI STRUCTURES WITH THIN SI LAYERS PREDEPOSITED AT ROOM-TEMPERATURE [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3566 - 3570

[8] EPITAXIAL-GROWTH OF SILICON AND GERMANIUM FILMS ON CAF2/SI [J]. THIN SOLID FILMS, 1986, 139 (03) : 287 - 297

[9] SPECIAL POINTS IN BRILLOUIN ZONE [J]. PHYSICAL REVIEW B, 1973, 8 (12): : 5747 - 5753

[10] ATOMIC SCREENING CONSTANTS FROM SCF FUNCTIONS [J]. JOURNAL OF CHEMICAL PHYSICS, 1963, 38 (11) : 2686 - &