ELECTRON-BEAM INDUCED METALLIZATION OF PALLADIUM ACETATE

被引:36
作者
STARK, TJ [1 ]
MAYER, TM [1 ]
GRIFFIS, DP [1 ]
RUSSELL, PE [1 ]
机构
[1] UNIV N CAROLINA, CHAPEL HILL, NC 27599 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 06期
关键词
D O I
10.1116/1.585826
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Films of palladium acetate, Pd(OOCCH3)2 0.1 and 0.3-mu-m thick have been stoichiometrically altered through exposure to electron beams of 1-30 keV. The lowest required doses for alteration, 1000 and 2500-mu-C/cm2, were obtained using beam energies of 4 and 5 keV, respectively. These results have been related to Monte Carlo simulations of energy absorbed within a thin surface film. The minimum line widths of features produced was less than 100 nanometers with estimated Pd/C ratio of 1 and measured resistivities as low as 100-mu-OMEGA cm.
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页码:3475 / 3478
页数:4
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