CHARACTERIZATION OF THE MN ACCEPTOR LEVEL IN GAAS

被引：19

作者：

MONTELIUS, L

NILSSON, S

SAMUELSON, L

JANZEN, E

AHLSTROM, M

机构：

[1] ASEA RES & INNOVAT,OPTOELECTR,S-721D VASTERAS,SWEDEN

[2] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.341837

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1564 / 1567

页数：4

共 21 条

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