A COMPUTER-ANALYSIS OF EFFECTS OF ANNEALING ON INP INSULATOR-SEMICONDUCTOR INTERFACE PROPERTIES USING MIS C-V CURVES

被引:30
作者
HE, L
HASEGAWA, H
SAWADA, T
OHNO, H
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 04期
关键词
D O I
10.1143/JJAP.27.512
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:512 / 521
页数:10
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共 31 条
[1]   HIGH-SPEED ENHANCEMENT MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS EXHIBITING VERY HIGH TRANSCONDUCTANCE [J].
ANTREASYAN, A ;
GARBINSKI, PA ;
MATTERA, VD ;
TEMKIN, H .
APPLIED PHYSICS LETTERS, 1986, 49 (09) :513-515
[2]   ELECTRICAL CHARACTERISTICS OF SIO2-SI INTERFACE NEAR MIDGAP AND IN WEAK INVERSION [J].
COOPER, JA ;
SCHWARTZ, RJ .
SOLID-STATE ELECTRONICS, 1974, 17 (07) :641-654
[4]   HYBRID ORBITAL ENERGY FOR HETEROJUNCTION BAND LINEUP [J].
HASEGAWA, H ;
OHNO, H ;
SAWADA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (04) :L265-L268
[5]   PHOTO-IONIZATION AND THERMAL-ACTIVATION OF COMPOUND SEMICONDUCTOR MOS INTERFACES AND ORIGIN OF INTERFACE STATES [J].
HASEGAWA, H ;
SAWADA, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :457-462
[6]   ELECTRICAL MODELING OF COMPOUND SEMICONDUCTOR INTERFACE FOR FET DEVICE ASSESSMENT [J].
HASEGAWA, H ;
SAWADA, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1055-1061
[7]   A COMMON ENERGY REFERENCE FOR DX CENTERS AND EL2 LEVELS IN III-V COMPOUND SEMICONDUCTORS [J].
HASEGAWA, H ;
OHNO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (04) :L319-L322
[8]   ELECTRONIC AND MICROSTRUCTURAL PROPERTIES OF DISORDER-INDUCED GAP STATES AT COMPOUND SEMICONDUCTOR-INSULATOR INTERFACES [J].
HASEGAWA, H ;
HE, L ;
OHNO, H ;
SAWADA, T ;
HAGA, T ;
ABE, Y ;
TAKAHASHI, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1097-1107
[9]   UNIFIED DISORDER INDUCED GAP STATE MODEL FOR INSULATOR-SEMICONDUCTOR AND METAL-SEMICONDUCTOR INTERFACES [J].
HASEGAWA, H ;
OHNO, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1130-1138
[10]   ON THE ELECTRICAL-PROPERTIES OF COMPOUND SEMICONDUCTOR INTERFACES IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES AND THE POSSIBLE ORIGIN OF INTERFACE STATES [J].
HASEGAWA, H ;
SAWADA, T .
THIN SOLID FILMS, 1983, 103 (1-2) :119-140