ABSOLUTE PRESSURE-DEPENDENCE OF THE 2ND IONIZATION LEVEL OF EL2 IN GAAS

被引：5

作者：

BLISS, DE ^{[1
]}

NOLTE, DD ^{[1
]}

WALUKIEWICZ, W ^{[1
]}

HALLER, EE ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & CHEM SCI,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 12期

关键词：

D O I：

10.1063/1.102544

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the results of deep level transient spectroscopy experiments with the second ionization level of the double donor defect (EL2) under uniaxial stress in p-type GaAs. We measure the shift in the hole emission rate as a function of stress applied in the [100] and [110] directions. By modeling the valence band with two independently displacing bands and appropriately derived effective masses, we determine the absolute hydrostatic pressure derivative of the defect to be 39±15 meV GPa-1. The shear contribution is negligible. These results are very different from those obtained for the first ionization level, which has a much higher absolute pressure derivative of 90 meV GPa-1.

引用

页码：1143 / 1145

页数：3

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