MOVPE OF HIGH-QUALITY ZNSE - ROLE OF MISMATCH ON REFLECTIVITY AND PHOTOCONDUCTIVITY

被引：6

作者：

AULOMBARD, RL

AVEROUS, M

BRIOT, O

CALAS, J

COQUILLAT, D

HAMDANI, F

LASCARAY, JP

MOULIN, N

TEMPIER, N

机构：

[1] Groupe d'Etudes des Semiconducteurs, UA 357, Université des Sciences et Techniques du Languedoc, Place E. Bataillon

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90966-O

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Metalorganic vapor phase epitaxy was used to grow high quality ZnSe. Two procedures were employed involving growth both at 300 and 500 °C. To achieve epitaxy of ZnSe at temperatures as low as 300 °C from alkyls, it was necessary to use a special double zone reactor. Reflectivity spectra show the lattice deformation due to mismatch for layers thinner than 1 μm. Photoconductivity responses related to the layer thickness are also reported. © 1989.

引用

页码：204 / 207

页数：4

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