STRUCTURE-SENSITIVE SPECTROSCOPY OF TRANSITION-METAL-HYDROGEN COMPLEXES IN SILICON

被引：48

作者：

WILLIAMS, PM

WATKINS, GD

UFTRING, S

STAVOLA, M

机构：

[1] Department of Physics, Sherman Fairchild Laboratory 161, Lehigh University, Bethlehem

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.70.3816

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Several centers that involve Pt and H have been introduced into n-type Si and studied by electron paramagnetic resonance and vibrational spectroscopy to provide unique structure-sensitive data for an H-passivated deep level impurity. Through the observation of Pt-H and -D hyperfine interactions, a new Pt-H-2 complex has been identified. This defect is still electrically active and its level has been located. Several vibrational bands due to Pt and H related centers were also found. H stretching bands at 1888.2 and 1889.5 cm-1 are assigned to the different charge states of the Pt-H-2 defect.

引用

页码：3816 / 3819

页数：4

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