ANISOTROPIC EXCITATION-SPECTRA OF GAAS/ALGAAS QUANTUM-WELLS GROWN ON VICINAL PLANE SUBSTRATES

被引：4

作者：

WENTINK, DJ

DAWSON, P

FOXON, CT

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT PURE & APPL PHYS,MANCHESTER M60 1QD,LANCS,ENGLAND

[2] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 09期

关键词：

D O I：

10.1063/1.109762

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report measurements of the photoluminescence excitation spectra of a series of GaAs/AlGaAs quantum well samples grown on vicinal plane substrates with differing off-cut angles. When the plane of polarization of the exciting light is changed we have observed a clear variation in the ratio of the strength of the n=1 light and heavy hole exciton transitions in samples grown on vicinal plane substrates. This behavior is attributed to anisotropic scattering at steps in the heterointerface.

引用

页码：1261 / 1263

页数：3

共 11 条

[1]

[Anonymous], 1983, QUANTUM THEORY LIGHT

[2]

BASTARD G, 1988, WAVE MECHANICS APPLI

[3] POLARIZATION ANISOTROPIES IN QUANTUM-WELLS [J].