GE-DOPED P-TYPE EPITAXIAL GAAS FOR MICROWAVE DEVICE APPLICATION

被引：10

作者：

ROSZTOCZY, FE ^{[1
]}

CALDWELL, JF ^{[1
]}

KINOSHITA, J ^{[1
]}

OMORI, M ^{[1
]}

机构：

[1] VARIAN ASSOC, PALO ALTO, CA 94303 USA

来源：

关键词：

D O I：

10.1063/1.1654494

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：525 / 526

页数：2

共 17 条

[1] ARCHER RJ, 1967, 1966 P GAAS S READ, P103
[2] CALDWELL JF, 1972, S GAAS RELATED COMPO
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[J]. SOLID-STATE ELECTRONICS, 1966, 9 (07) : 721 - +
[4] HONIG RE, 1969, RCA REV, V30, P285
[5] HOULDING N, 1960, MICROWAVE J, V3, P40
[6] FABRICATION AND NOISE PERFORMANCE OF HIGH-POWER GAAS IMPATTS
IRVIN, JC
COLEMAN, DJ
JOHNSON, WA
TATSUGUC.I
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DUNN, CN
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08): : 1212 - &
[7] KANG CS, 1969, 1968 GAAS S P I PHYS, P18
[8] ZINC-DIFFUSED GAAS ELECTROLUMINESCENT DIODES WITH LONG OPERATING LIFE
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MARINACE, JC
TOPALIAN, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) : 2060 - &
[9] IMPROVED SURFACE QUALITY OF SOLUTION GROWN GAAS AND PB1-XSNXTE EPITAXIAL LAYERS - NEW TECHNIQUE
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HARRIS, JS
CHU, JC
GERTNER, ER
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 15 (02) : 107 - &
[10] X-BAND GAAS DOUBLE-DRIFT IMPATT DEVICES
OMORI, M
ROSZTOCZY, F
HAYASHI, R
[J]. PROCEEDINGS OF THE IEEE, 1973, 61 (02) : 255 - 256