CHARACTERIZATION OF EPITAXIAL BI2SR2CACU2O8+DELTA THIN-FILMS

被引：4

作者：

WAGNER, P

FREY, U

HILLMER, F

HADISH, A

JAKOB, G

ADRIAN, H

STEINBORN, T

RANNO, L

ELSCHNER, A

HEYVAERT, I

BRUYNSERAEDE, Y

机构：

[1] TH DARMSTADT, INST MAT WISSENSCH, D-64289 DARMSTADT, GERMANY

[2] UNIV PARIS 07, PHYS SOLIDES GRP, F-75251 PARIS, FRANCE

[3] ZENT FORSCHUNGSINST BAYER AG, D-47829 KREFELD, GERMANY

[4] KATHOLIEKE UNIV LEUVEN, VASTE STOF FYS MAGNETISME LAB, B-3030 LOUVAIN, BELGIUM

来源：

JOURNAL OF SUPERCONDUCTIVITY | 1994年 / 7卷 / 01期

关键词：

BI-2212 THIN FILMS; DC SPUTTERING; STRUCTURAL CHARACTERIZATION;

D O I：

10.1007/BF00730398

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a dc sputtering method for the full in situ preparation of Bi2Sr2CaCu2O8+delta thin films on SrTiO3 and LaAlO3. T(c) values of more than 90 K can be achieved by oxidizing annealing below the melting point, followed by a reducing anneal at 500-degrees-C. The structural properties of the films are revealed by X-ray diffraction in Bragg-Brentano geometry (strong c-axis orientation with FWHM (0 0 10) = 0.3) and also by PHI scans (epitaxy within the substrate plane). Rutherford backscattering and channeling confirmed the correct composition of the cations while the minimum yield, chi(min), is 23%. Depth profiles by SNMS show a very homogeneous distribution of the cations with no detectable loss of bismuth near the surface. The surface morphology of the films was studied by SEM and by STM. Patterning of the films in lateral geometry can be performed by photolithographic techniques without degradation of T(c).

引用

页码：217 / 219

页数：3

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