THIN EPITAXIAL CEO2 FILMS PREPARED BY AEROSOL MOCVD

被引：14

作者：

FROHLICH, K ^{[1
]}

MACHAJDIK, D ^{[1
]}

WEISS, F ^{[1
]}

BOCHU, B ^{[1
]}

机构：

[1] ECOLE NATL SUPER PHYS GRENOBLE,LMGP,CNRS,URA 1109,F-38402 ST MARTIN DHERES,FRANCE

来源：

MATERIALS LETTERS | 1994年 / 21卷 / 5-6期

关键词：

D O I：

10.1016/0167-577X(94)90244-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin epitaxial CeO2 films were prepared on (001) MgO and (1 $($) over bar$$ 102) Al2O3 single crystal substrates by the aerosol MOCVD method. X-ray diffraction analysis using a four-circle texture goniometer revealed small amount of in-plane misoriented CeO2 crystallites for the MgO substrate and high epitaxial degree of CeO2 films deposited on (1 $($) over bar$$ 102) Al2O3.

引用

页码：377 / 380

页数：4

共 9 条

[1] DEMONSTRATION OF Y1BA2CU3O7-DELTA AND COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE FABRICATION ON THE SAME SAPPHIRE SUBSTRATE [J].

BURNS, MJ ;

DELAHOUSSAYE, PR ;

RUSSELL, SD ;

GARCIA, GA ;

CLAYTON, SR ;

RUBY, WS ;

LEE, LP .

APPLIED PHYSICS LETTERS, 1993, 63 (09) :1282-1284

[2] LARGE-AREA YBA2CU3O7-DELTA THIN-FILMS ON SAPPHIRE FOR MICROWAVE APPLICATIONS [J].

COLE, BF ;

LIANG, GC ;

NEWMAN, N ;

CHAR, K ;

ZAHARCHUK, G .

APPLIED PHYSICS LETTERS, 1992, 61 (14) :1727-1729

[3] HIGH-QUALITY EPITAXY OF YBA2CU3O7-X ON SILICON-ON-SAPPHIRE WITH THE MULTIPLE BUFFER LAYER YSZ/CEO2 [J].

COPETTI, CA ;

SOLTNER, H ;

SCHUBERT, J ;

ZANDER, W ;

HOLLRICHER, O ;

BUCHAL, C ;

SCHULZ, H ;

TELLMANN, N ;

KLEIN, N .

APPLIED PHYSICS LETTERS, 1993, 63 (10) :1429-1431

[4]

DAHMEN KH, 1992, P S A1 INT C ADV MAT, P715

[5] SOLID SOURCE MOCVD FOR THE EPITAXIAL-GROWTH OF THIN OXIDE-FILMS [J].

LU, Z ;

FEIGELSON, RS ;

ROUTE, RK ;

DICAROLIS, SA ;

HISKES, R ;

JACOWITZ, RD .

JOURNAL OF CRYSTAL GROWTH, 1993, 128 (1-4) :788-792

[6] SURFACE-RESISTANCE OF EPITAXIAL YBA2CU3O7 THIN-FILMS ON CEO2 DIFFUSION-BARRIERS ON SAPPHIRE [J].

MERCHANT, P ;

JACOWITZ, RD ;

TIBBS, K ;

TABER, RC ;

LADERMAN, SS .

APPLIED PHYSICS LETTERS, 1992, 60 (06) :763-765

[7] PREPARATION OF YBA2CU3O7 FILMS BY LOW-PRESSURE MOCVD USING LIQUID SOLUTION SOURCES [J].

WEISS, F ;

FROHLICH, K ;

HAASE, R ;

LABEAU, M ;

SELBMANN, D ;

SENATEUR, JP ;

THOMAS, O .

JOURNAL DE PHYSIQUE IV, 1993, 3 (C3) :321-328

[8] EPITAXIAL CEO2 FILMS AS BUFFER LAYERS FOR HIGH-TEMPERATURE SUPERCONDUCTING THIN-FILMS [J].

WU, XD ;

DYE, RC ;

MUENCHAUSEN, RE ;

FOLTYN, SR ;

MALEY, M ;

ROLLETT, AD ;

GARCIA, AR ;

NOGAR, NS .

APPLIED PHYSICS LETTERS, 1991, 58 (19) :2165-2167

[9]

34394 POWD DIFFR FIL

← 1 →