DEMONSTRATION OF Y1BA2CU3O7-DELTA AND COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE FABRICATION ON THE SAME SAPPHIRE SUBSTRATE

We report the first fabrication of active semiconductor and high-temperature superconducting devices on the same substrate. Test structures of complementary metal-oxide-semiconductor transistors were fabricated on the same sapphire substrate as test structures of Y1Ba2Cu3O7-delta flux-flow transistors, and separately, Y1Ba2Cu3O7-delta superconducting quantum interference devices utilizing both biepitaxial and step-edge Josephson junctions. Both semiconductor and superconductor devices were operated at 77 K. The cofabrication of devices using these disparate yet complementary electronic technologies on the same substrate opens the door for the fabrication of true semiconductive/superconductive hybrid integrated circuits capable of exploiting the best features of each of these technologies.