SILICON LAYERS ON POLYCRYSTALLINE SILICON SUBSTRATES - INFLUENCE OF GROWTH-PARAMETERS DURING LIQUID-PHASE EPITAXY

被引：11

作者：

STEINER, B

WAGNER, G

机构：

[1] Institut für Kristallzüchtung, D-12489 Berlin

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 146卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00482-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In order to study the influence of the process parameters during growth of thin Si layers on polycrystalline Si substrates we carried out liquid phase epitaxy under different experimental conditions. We investigated the dependence of layer thickness and morphology of grain boundaries on these parameters. We also studied the incorporation of dopants (Ga; As) in the Si layers.

引用

页码：293 / 298

页数：6

共 12 条

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