INVERSION BOUNDARIES IN GAAS GROWN ON SI

被引：14

作者：

LILIENTALWEBER, Z ^{[1
]}

OKEEFE, MA ^{[1
]}

WASHBURN, J ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,NATL CTR ELECTRON MICROSCOPY,BERKELEY,CA 94720

来源：

ULTRAMICROSCOPY | 1989年 / 30卷 / 1-2期

关键词：

D O I：

10.1016/0304-3991(89)90168-X

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：20 / 26

页数：7

共 22 条

[1]

ASPEN DE, 1987, MRS, V91, P45

[2]

Carter C.B., 1987, MATER RES SOC S P, V91, P181

[3] ANTIPHASE BOUNDARIES IN GAAS [J].

CHO, NH ;

DECOOMAN, BC ;

CARTER, CB ;

FLETCHER, R ;

WAGNER, DK .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :879-881

[4]

FAN JCC, 1987, MATER RES SOC S P, V91

[5]

FAN JCC, 1986, MATER RES SOC S P, V67

[6]

HULL R, 1987, MATER RES SOC S P, V94

[7] SELF-ANNIHILATION OF ANTIPHASE BOUNDARY IN GAAS ON SI(100) GROWN BY MOLECULAR-BEAM EPITAXY [J].

KAWABE, M ;

UEDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06) :L944-L946

[8]

KROEMER H, 1986, MATER RES SOC S P, V67, P3

[9] ELECTRON-MICROSCOPE STUDIES OF A GE-GAAS SUPER-LATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].

KUAN, TS ;

CHANG, CA .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4408-4413

[10] DETERMINATION OF ARSENIC AND GA PLANES BY CONVERGENT BEAM ELECTRON-DIFFRACTION [J].

LILIENTALWEBER, Z ;

PARECHANIANALLEN, L .

APPLIED PHYSICS LETTERS, 1986, 49 (18) :1190-1192

← 1 2 3 →