ELECTRON TRAPPING IN THIN SIO2 FILMS DUE TO AVALANCHE CURRENTS

[1] Bulucea C., 1970, Alta Frequenza, V39, P734

[2] A NEW MNOS CHARGE STORAGE EFFECT [J]. SOLID-STATE ELECTRONICS, 1969, 12 (12) : 981 - &

[3] ELECTRON GATE CURRENTS AND THRESHOLD STABILITY IN N-CHANNEL STACKED GATE MOS TETRODE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (02) : 105 - &

[4] FROHMANBENTCHKO.D, 1971, ISSCC, P80

[5] CHANNEL SHORTENING IN MOS TRANSISTORS DURING JUNCTION WALK-OUT [J]. APPLIED PHYSICS LETTERS, 1971, 19 (08) : 287 - &

[6] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &

[7] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 174 - +

[8] AVALANCHE INJECTION OF ELECTRONS INTO INSULATING SIO2 USING MOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 3052 - +

[9] NICOLLIAN EH, 1967, 6 P ANN REL PHYS S, P66

[10] SCHENCK JF, 1967, 6 P ANN REL PHYS S, P31

[1] Bulucea C., 1970, Alta Frequenza, V39, P734

[2] A NEW MNOS CHARGE STORAGE EFFECT [J]. SOLID-STATE ELECTRONICS, 1969, 12 (12) : 981 - &

[3] ELECTRON GATE CURRENTS AND THRESHOLD STABILITY IN N-CHANNEL STACKED GATE MOS TETRODE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (02) : 105 - &

[4] FROHMANBENTCHKO.D, 1971, ISSCC, P80

[5] CHANNEL SHORTENING IN MOS TRANSISTORS DURING JUNCTION WALK-OUT [J]. APPLIED PHYSICS LETTERS, 1971, 19 (08) : 287 - &

[6] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &

[7] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 174 - +

[8] AVALANCHE INJECTION OF ELECTRONS INTO INSULATING SIO2 USING MOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 3052 - +

[9] NICOLLIAN EH, 1967, 6 P ANN REL PHYS S, P66

[10] SCHENCK JF, 1967, 6 P ANN REL PHYS S, P31