SELF-INDUCED LATERALLY MODULATED GAINP/INASP STRUCTURE GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY

被引：59

作者：

PONCHET, A ^{[1
]}

ROCHER, A ^{[1
]}

OUGAZZADEN, A ^{[1
]}

MIRCEA, A ^{[1
]}

机构：

[1] FRANCE TELECOM,CNET,PAB,F-92225 BAGNEUX,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 12期

关键词：

D O I：

10.1063/1.356573

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zero-net strained multilayer alternating tensile GaInP and compressive InAsP have been grown on (001)InP by metal-organic vapor-phase epitaxy. A structural analysis using transmission electron microscopy (TEM). is reported. A remarkably regular laterally modulated structure has been observed. GaInP- and InAsP-rich vertical zones alternate with a periodicity of 0.28 mum along the lateral [110] direction, thus balancing the mismatch along the [110] rather than the [001] growth direction. TEM experiments suggest that each vertical zone is partially elastically relaxed.

引用

页码：7881 / 7883

页数：3

共 16 条

[11] STRAINED GAXIN1-XP MULTIPLE QUANTUM WIRE LIGHT-EMITTING-DIODES - A LUMINESCENCE POLARIZATION STUDY [J].