POSITION RESOLVED CARRIER LIFETIME MEASUREMENTS IN SILICON POWER DEVICES BY TIME RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY

被引:4
作者
BOHNERT, G
HACKER, R
HANGLEITER, A
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来源
JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-4期
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D O I
10.1051/jphyscol:19884128
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页码:617 / 620
页数:4
相关论文
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[2]   NONRADIATIVE RECOMBINATION VIA DEEP IMPURITY LEVELS IN SILICON - EXPERIMENT [J].
HANGLEITER, A .
PHYSICAL REVIEW B, 1987, 35 (17) :9149-9161
[3]  
HANGLEITER A, 1988, 18TH P INT C PHYS SE, V2