HE+ BACKSCATTERING AND AUGER-ELECTRON SPECTROSCOPY STUDY OF THE ION-INDUCED MODIFICATION OF COPPER-FILMS DEPOSITED ON SINGLE-CRYSTAL SILICON

被引：1

作者：

BAERI, P ^{[1
]}

LUZZI, G ^{[1
]}

PAPAGNO, L ^{[1
]}

机构：

[1] UNIV CALABRIA,DIPART FIS,COSENZA,ITALY

来源：

THIN SOLID FILMS | 1979年 / 56卷 / 03期

关键词：

D O I：

10.1016/0040-6090(79)90137-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The sputtering yields of copper due to argon ion milling were measured by mega-electronvolt He+ Rutherford backscattering and Auger electron spectroscopy for thin copper films deposited on 〈111〉-oriented silicon substrates. We found that recrystallization occurs in the copper films during the argon ion bombardment. The copper profile broadens at the Si-Cu interface and the spread increases with the beam energy during ion milling. © 1979.

引用

页码：349 / 356

页数：8

共 5 条

[1] PRINCIPLES AND APPLICATIONS OF ION-BEAM TECHNIQUES FOR ANALYSIS OF SOLIDS AND THIN-FILMS [J].