STUDY OF LOW-TEMPERATURE OXIDATION IN AU/SI AND CU/SI SYSTEMS BY 7-MEV ALPHA-PARTICLE BACKSCATTERING ANALYSIS

被引：8

作者：

LI, J ^{[1
]}

YONEZAWA, H ^{[1
]}

SHIGEMATSU, T ^{[1
]}

机构：

[1] CORNELL UNIV, DEPT MAT SCI & ENGN, ITHACA, NY 14853 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 3A期

关键词：

LOW-TEMPERATURE OXIDATION OF SILICON; CU ON SILICON; AU ON SILICON; 7-MEV ALPHA PARTICLE BACKSCATTERING ANALYSIS; RESONANCE SCATTERING;

D O I：

10.1143/JJAP.31.L210

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature oxidation kinetics in the Au/Si and Cu/Si systems was measured by a 7-MeV alpha backscattering technique. The formation of a Si oxide layer near the surface in the Au / Si system is mainly controlled by intermixing between the Au and Si substrates. The formation of thick SiO2 in the Cu-Si interface at room temperature is a catalytic process due to the presence of a CU3Si compound.

引用

页码：L210 / L213

页数：4

共 6 条

[1] UNUSUAL ROOM-TEMPERATURE INTERMIXING AND OXIDATION IN COPPER DEPOSITED ON A FLUORINATED AMORPHOUS-SILICON SYSTEM [J].