MODULATED PHOTOCONDUCTIVITY STUDY OF CHARGED AND NEUTRAL DEFECTS IN UNDOPED AMORPHOUS-SILICON

被引：33

作者：

HATTORI, K

ADACHI, Y

ANZAI, M

OKAMOTO, H

HAMAKAWA, Y

机构：

[1] Faculty of Engineering Science, Osaka University, Toyonaka

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 05期

关键词：

D O I：

10.1063/1.357520

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel spectroscopy technique based on modulated photoconductivity measurements with varying illumination level has been applied to investigate the capture coefficients and the energy distribution of defect states in undoped amorphous silicon. From the experimental data, charged and neutral defect distributions are clearly resolved according to their own capture coefficients. The carrier capture process as well as the defect formation mechanism are both quantitatively discussed.

引用

收藏

页码：2841 / 2850

页数：10

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