3RD-ORDER NONLINEARITY OF SEMICONDUCTOR-DOPED GLASSES AT FREQUENCIES BELOW BAND-GAP

It is indicated in the measurements that the real part of the third-order susceptibility of semi-conductor-doped glasses (SDG) below band gap is positive. It takes valves not too different from those of the glass matrix itself for the usual fraction volume of the crystallites. The results show that, below band gap, similarly to Imχm(3) and to the refractive index change per excited carrier Reχm(3) were also not much affected when the size of the semiconductor shrinks to a few nm.