50-GHZ SELF-ALIGNED SILICON BIPOLAR-TRANSISTORS WITH ION-IMPLANTED BASE PROFILES

被引：23

作者：

WARNOCK, J

CRESSLER, JD

JENKINS, KA

CHEN, TC

SUN, JYC

TANG, DD

机构：

[1] IBM Thomas J. Watson Research Center, Yorktown Heights

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 10期

关键词：

D O I：

10.1109/55.63001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon bipolar transistors having cutoff frequencies from 40 to 50 GHz have been fabricated in a double-polysilicon self-aligned structure, using a process which relies on ion implantation for the intrinsic base formation. The devices have nearly ideal dc characteristics with breakdown voltages adequate for most digital applications. These results demonstrate that the performance limits of conventional implanted technologies are significantly higher than previously thought. © 1990 IEEE

引用

页码：475 / 477

页数：3

共 9 条

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