A SUBMICROMETER HIGH-PERFORMANCE BIPOLAR TECHNOLOGY

被引：27

作者：

CHEN, TC

TOH, KY

CRESSLER, JD

WARNOCK, J

LU, PF

TANG, DD

LI, GP

CHUANG, CT

NING, TH

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 08期

关键词：

D O I：

10.1109/55.31758

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：364 / 366

页数：3

共 10 条

[1]

CHUANG CT, 1987, IEEE ELECTR DEVICE L, V8, P321, DOI 10.1109/EDL.1987.26645

[2]

Davari B., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P92, DOI 10.1109/IEDM.1988.32759

[3]

KONAKA S, 1987, 19TH C SOL STAT DEV, P331

[4] AN ADVANCED HIGH-PERFORMANCE TRENCH-ISOLATED SELF-ALIGNED BIPOLAR TECHNOLOGY [J].

LI, GP ;

NING, TH ;

CHUANG, CT ;

KETCHEN, MB ;

TANG, DDL ;

MAUER, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) :2246-2254

[5] COLLECTOR BASE JUNCTION AVALANCHE EFFECTS IN ADVANCED DOUBLE-POLY SELF-ALIGNED BIPOLAR-TRANSISTORS [J].

LU, PF ;

CHEN, TC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (06) :1182-1188

[6] BIPOLAR-TRANSISTOR DESIGN FOR OPTIMIZED POWER-DELAY LOGIC-CIRCUITS [J].

TANG, DD ;

SOLOMON, PM .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (04) :679-684

[7]

TOH KY, 1989, IN PRESS IEEE J SOLI, V24

[8]

TOH KY, 1989, ISSCC, P224

[9]

UENO K, 1987, IEDM TECH DIG, P371

[10]

WASHIO K, 1987, ISSCC, P58

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