SIDEWALL-RELATED NARROW CHANNEL-EFFECT IN MESA-ISOLATED FULLY-DEPLETED ULTRA-THIN SOI NMOS DEVICES

被引：6

作者：

KUO, JB

CHEN, YG

SU, KW

机构：

[1] Department of Electrical Engineering, National Taiwan University, Taipei

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 09期

关键词：

D O I：

10.1109/55.406794

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper reports the sidewall-related narrow channel effect in mesa-isolated fully-depleted ultra-thin SOI NMOS devices, Based on the study, contrary to bulk NMOS devices, for a channel width shrinking from 1 mu m to 0.2 mu m, the threshold voltage of mesa-isolated ultra-thin SOI NMOS devices with a 1000 Angstrom thin film doped with 10(17) cm(-3), decreases by 0.145 V for a front gate oxide of 100 Angstrom and a sidewall oxide of 150 Angstrom as a result of the sidewall edge effect.

引用

页码：379 / 381

页数：3

共 8 条

[1] A COMPARISON OF FINE-DIMENSION SILICON-ON-SAPPHIRE AND BULK-SILICON COMPLEMENTARY MOS DEVICES AND CIRCUITS [J].