ANALYTICAL MODEL AND CHARACTERIZATION OF SMALL GEOMETRY MOSFETS

被引：30

作者：

YAMAGUCHI, T

MORIMOTO, S

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/T-ED.1983.21168

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：559 / 566

页数：8

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