MEASUREMENT AND MODELING OF THE SIDEWALL THRESHOLD VOLTAGE OF MESA-ISOLATED SOI MOSFETS

被引：25

作者：

MATLOUBIAN, M

SUNDARESAN, R

LU, H

机构：

来源：

关键词：

D O I：

10.1109/16.299676

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：938 / 942

页数：5

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