MOLECULAR-DYNAMICS SIMULATIONS FOR MOLECULAR-BEAM EPITAXY - OVERLAYER GROWTH-PATTERN IN 2-COMPONENT LENNARD-JONES SYSTEMS

被引：21

作者：

HARA, K

IKEDA, M

OHTSUKI, O

TERAKURA, K

MIKAMI, M

TAGO, Y

OGUCHI, T

机构：

[1] UNIV TOKYO, INST SOLID STATE PHYS, MINATO KU, TOKYO 106, JAPAN

[2] FUJITSU LTD, DEPT SCI SYST, SYST ENGN GRP, OHTA KU, TOKYO 144, JAPAN

[3] NATL RES INST MET, MEGURO KU, TOKYO 153, JAPAN

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 13期

关键词：

D O I：

10.1103/PhysRevB.39.9476

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9476 / 9485

页数：10

共 8 条

[1] ATOMISTIC NUMERICAL-SIMULATION OF EPITAXIAL CRYSTAL-GROWTH [J].

DASSARMA, S ;

PAIK, SM ;

KHOR, KE ;

KOBAYASHI, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1179-1183

[2] SPACE-GROUP DETERMINATION OF LOW-TEMPERATURE W(001)(SQUARE ROOT 2X SQUARE ROOT 2) SURFACE-STRUCTURE BY LOW-ENERGY-ELECTRON DIFFRACTION [J].

DEBE, MK ;

KING, DA .

PHYSICAL REVIEW LETTERS, 1977, 39 (11) :708-711

[3]

FARROW RFC, 1987, FILM GROWTH TECHNIQU

[4]

GAULINSKI ET, 1987, PHYS REV B, V36, P4774

[5] VAPOR-PHASE GROWTH OF AMORPHOUS MATERIALS - A MOLECULAR-DYNAMICS STUDY [J].

SCHNEIDER, M ;

RAHMAN, A ;

SCHULLER, IK .

PHYSICAL REVIEW B, 1986, 34 (03) :1802-1805

[6] ROLE OF RELAXATION IN EPITAXIAL-GROWTH - A MOLECULAR-DYNAMICS STUDY [J].

SCHNEIDER, M ;

RAHMAN, A ;

SCHULLER, IK .

PHYSICAL REVIEW LETTERS, 1985, 55 (06) :604-606

[7] EPITAXIAL-GROWTH OF SILICON - A MOLECULAR-DYNAMICS SIMULATION [J].

SCHNEIDER, M ;

SCHULLER, IK ;

RAHMAN, A .

PHYSICAL REVIEW B, 1987, 36 (02) :1340-1343

[8]

Shinjo T., 1987, Metallic superlattices. Artificially structured materials, P1

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