DEEP LEVELS ASSOCIATED WITH NEAREST-NEIGHBOR SUBSTITUTIONAL DEFECT PAIRS IN GAAS

被引：44

作者：

SANKEY, OF ^{[1
]}

DOW, JD ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 09期

关键词：

D O I：

10.1063/1.92479

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：685 / 687

页数：3

共 18 条

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[9] THEORY OF DEEP SUBSTITUTIONAL SP3-BONDED IMPURITY LEVELS AND CORE EXCITONS AT SEMICONDUCTOR INTERFACES [J].

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