SELF-LIMITING GROWTH ON THE BETA-SIC(001) SURFACE

被引：34

作者：

HARA, S ^{[1
]}

AOYAGI, Y ^{[1
]}

KAWAI, M ^{[1
]}

MISAWA, S ^{[1
]}

SAKUMA, E ^{[1
]}

YOSHIDA, S ^{[1
]}

机构：

[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN

来源：

SURFACE SCIENCE | 1992年 / 273卷 / 03期

关键词：

D O I：

10.1016/0039-6028(92)90080-P

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Atomic-layer control of cubic SiC(001) was investigated with gas reactions on the surface. Self-limiting growth at about one atomic monolayer at 1050-degrees-C is observed both for Si2H6 exposure onto a carbon-terminated surface and for C2H2 exposure onto a silicon-covered surface. This suggests that atomic layer epitaxy is probable for the surface.

引用

页码：437 / 441

页数：5

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