EXTREMELY LOW THRESHOLD INGAASP/INP DFB LASER BY MOCVD LPE HYBRID PROCESS

被引：8

作者：

YOSHIDA, N

KIMURA, T

MIZUGUCHI, K

OHKURA, Y

MUROTANI, T

KAWAGISHI, A

机构：

[1] Mitsubishi Electric Corp, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

Distributed Feedback (DFB) Laser Diodes - Indium Gallium Arsenide Phosphide - Indium Phosphide - Liquid Phase Epitaxy - Metalorganic Chemical Vapor Deposition;

D O I：

10.1016/0022-0248(88)90627-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：832 / 837

页数：6

共 10 条

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[5] HIGH-PERFORMANCE, LONG WAVELENGTH OPTOELECTRONIC COMPONENTS BY ATMOSPHERIC-PRESSURE MOVPE [J].

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[6] MOVPE-GROWN 1.5 MU-M DISTRIBUTED FEEDBACK LASERS ON CORRUGATED INP SUBSTRATES [J].

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[7] CW OPERATION OF 1.57-MU-M GAXIN1-XASYP1-YINP DISTRIBUTED FEEDBACK LASERS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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[8] GAINAS-INP MULTIQUANTUM WELL STRUCTURES GROWN BY METALORGANIC GAS-PHASE EPITAXY WITH ADDUCTS [J].

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[9] 1.3 MU-M INGAASP/INP DISTRIBUTED-FEEDBACK P-SUBSTRATE PARTIALLY INVERTED BURIED-HETEROSTRUCTURE LASER DIODE [J].

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[10] LOW THRESHOLD OPERATION OF 1.55-MU-M GAINASP-INP DFB-BH LDS ENTIRELY GROWN BY MOVPE ON INP GRATINGS [J].

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ELECTRONICS LETTERS, 1988, 24 (03) :147-149

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