TUNNELING IN ARTIFICIAL AL2O3 TUNNEL BARRIERS AND AL2O3-METAL MULTILAYERS

被引：23

作者：

BARNER, JB

RUGGIERO, ST

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.39.2060

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2060 / 2071

页数：12

共 67 条

[51] GENERALIZED FORMULA FOR ELECTRIC TUNNEL EFFECT BETWEEN SIMILAR ELECTRODES SEPARATED BY A THIN INSULATING FILM [J].

SIMMONS, JG .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1793-&

[52]

Talvacchio J., 1988, Metallic Multi-Layers and Epitaxy. Proceedings of a Symposium, P109

[53] SURFACE STABILITY OF NBN SINGLE-CRYSTAL FILMS [J].

TALVACCHIO, J ;

SINHAROY, S ;

BRAGINSKI, AI .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) :611-614

[54] TUNNEL-JUNCTIONS FABRICATED FROM COHERENT NBN/MGO/NBN AND NBN/A12O3-NBN STRUCTURES [J].

TALVACCHIO, J ;

BRAGINSKI, AI .

IEEE TRANSACTIONS ON MAGNETICS, 1987, 23 (02) :859-862

[55]

TALVACCHIO J, COMMUNICATION

[56] INSULATOR INTERFACE EFFECTS IN SPUTTER-DEPOSITED NBN/MGO/NBN (SUPERCONDUCTOR INSULATOR SUPERCONDUCTOR) TUNNEL-JUNCTIONS [J].

THAKOOR, S ;

LEDUC, HG ;

STERN, JA ;

THAKOOR, AP ;

KHANNA, SK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1721-1725

[57] EPITAXIAL-GROWTH OF NBN ON AN ULTRATHIN MGO SEMICONDUCTOR SYSTEM [J].

TONOUCHI, M ;

SAKAGUCHI, Y ;

KOBAYASHI, T .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) :961-966

[58]

TRACK EK, 1986, ADV CRYO ENG, V32, P635

[59] RARE-EARTH-OXIDES AS ARTIFICIAL BARRIERS IN SUPERCONDUCTING TUNNELING JUNCTIONS [J].

UMBACH, CP ;

GOLDMAN, AM ;

TOTH, LE .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :81-83

[60] INCREMENTAL CHARGING OF SINGLE SMALL PARTICLES [J].

VANBENTUM, PJM ;

SMOKERS, RTM ;

VANKEMPEN, H .

PHYSICAL REVIEW LETTERS, 1988, 60 (24) :2543-2546

← 1 2 3 4 5 6 7 →