MONTE-CARLO SIMULATIONS OF HIGH-ENERGY ELECTRONS AND HOLES IN SI-N-MOSFETS

被引：13

作者：

VENTURI, F

SANGIORGI, E

BRUNETTI, R

QUADE, W

JACOBONI, C

RICCO, B

机构：

[1] UNIV UDINE,DEPT PHYS,I-33100 UDINE,ITALY

[2] UNIV MODENA,DEPT PHYS,I-41100 MODENA,ITALY

[3] UNIV BOLOGNA,DIPARTIMENTO ELETTR INFORMAT & SISTEMIST,I-40126 BOLOGNA,ITALY

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1991年 / 10卷 / 10期

关键词：

D O I：

10.1109/43.88923

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Monte Carlo (MC) device simulations of high energy electrons and holes in Si-n-MOSFET's are presented. Key features of this work include the use of a suitable silicon model for carrier transport at high electric fields, an original impact ionization model, and sophisticated numerical techniques to speed up the calculation. The case of submicrometer Si-n-MOSFET's is considered as a relevant application.

引用

页码：1276 / 1286

页数：11

共 18 条

[1]

[Anonymous], 1989, MONTE CARLO METHOD S

[2] A MANY-BAND SILICON MODEL FOR HOT-ELECTRON TRANSPORT AT HIGH-ENERGIES [J].