STUDIES ON THE LOW LOCAL TEMPERATURE RISE IN THE MIRROR FACET OF A HIGH-POWER INGAASP/GAAS LASER

被引：14

作者：

YOO, JS

OH, MS

PARK, HS

JUNG, ST

PARK, GT

PARK, KY

机构：

[1] Samsung Advanced Institute of Technology, Materials and Devices Research Center, P.O. Box Suwon

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 12A期

关键词：

FACET HEATING; INGAAS/GAAS LASER DIODE; LOCAL TEMPERATURE RISE; HEAT OF FORMATION; PHOSPHORUS OXIDE; NONRADIATIVE RECOMBINATION; PHOTOLUMINESCENCE;

D O I：

10.1143/JJAP.31.L1686

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To examine the facet heating behavior, high-power InGaAsP/GaAs laser diodes were fabricated with the epitaxial layers by liquid phase epitaxy (LPE) growth onto the moving substrate. It is shown that the facet temperature rise of the InGaAsP/GaAs laser diode has been kept lower than 30-degrees-C even above 500 mW. The kinematic model in which the presence of phosphorus oxide with a high heat of formation preserves the relatively low surface recombination rate at the mirror facet of the InGaAs/GaAs laser is proposed.

引用

页码：L1686 / L1688

页数：3

共 11 条

[1] MAPPING OF LOCAL TEMPERATURES ON MIRRORS OF GAAS/ALGAAS LASER-DIODES [J].