DETERMINATION OF CARRIER AND IMPURITY PROFILES IN DOPED N-TYPE QUANTUM-WELL STRUCTURES

被引：3

作者：

DICKEY, SA ^{[1
]}

LU, ZH ^{[1
]}

MAO, E ^{[1
]}

OH, EG ^{[1
]}

MAJERFELD, A ^{[1
]}

机构：

[1] UNIV COLORADO,DEPT ELECT & COMP ENGN,BOULDER,CO 80309

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 28卷 / 1-3期

基金：

美国国家科学基金会;

关键词：

CAPACITANCE-VOLTAGE; MULTIPLE-QUANTUM-WELL; CARRIER CONCENTRATION; PHOTOLUMINESCENCE;

D O I：

10.1016/0921-5107(94)90079-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Because of the inherent potential profile in multiple-quantum-well and superlattice structures, there is an effective redistribution of carriers between barriers and wells. In this work it is shown that through a combination of capacitance-voltage (C-V), deep-level transient spectroscopy, photoluminescence and Hall effect measurements a comprehensive evaluation of the carrier profiles and barrier purity in n-type material can be obtained. A detailed theoretical analysis of the C-V data is also presented which includes the effects of barrier depletion, the Debye tail and penetration of the electron wavefunction into the barrier layers.

引用

页码：341 / 345

页数：5

共 8 条

[1] CARRIER DYNAMICS IN QUANTUM-WELLS BEHAVING AS GIANT TRAPS [J].